Wavelength controlled InAs/InP quantum dots for telecom laser applications

This article reviews the recent progress in the growth and device applications of InAs/InP quantum dots (QDs) for telecom applications. Wavelength tuning of the metalorganic vapor-phase epitaxy grown single layer and stacked InAs QDs embedded in

• Type: Journal
• Year: 2006
• Where: MJ
• Authors: S. Anantathanasarn, R. Nötzel, P. J. van Veldhoven, F. W. M. van Otten, Y. Barbarin, G. Servanton, T. de Vries, E. Smalbrugge, E. J. Geluk, T. J. Eijkemans
• Keywords: Device Applications, InAs QDs, Metalorganic Vapor-phase Epitaxy, MJ 2006