A step by step methodology to analyze the IGBT failure mechanisms under short circuit and turn-off inductive conditions using 2D

A systematic methodology is developed in order to clarify the punch through Trench Insulated Gate Bipolar Transistor (T-IGBT) failure mechanisms which can occur under extreme operating conditions such as short circuit and clamped inductive switching. By considering a 2D dimensional physically based device simulation, and by analyzing some T-IGBT physical parameters, it is possible to identify if the failure mechanism is due to a breakdown, a latchup or a thermal runaway phenomenon.

• Type: Journal
• Year: 2007
• Where: MR
• Authors: A. Benmansour, Stephane Azzopardi, J. C. Martin, E. Woirgard
• Keywords: Extreme Operating Conditions, Gate Bipolar Transistor, MR 2007, Robotics, T-IGBT Physical Parameters