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    A step by step methodology to analyze the IGBT failure mechanisms under short circuit and turn-off inductive conditions using 2D
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    A step by step methodology to analyze the IGBT failure mechanisms under short circuit and turn-off inductive conditions using 2D
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    A systematic methodology is developed in order to clarify the punch through Trench Insulated Gate Bipolar Transistor (T-IGBT) failure mechanisms which can occur under extreme oper...
    A. Benmansour, Stephane Azzopardi, J. C. Martin, E...
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