With the advent of deep-submicron technologies, it has become essential to model the impact of physical/layout effects up front in all design flows [1]. The effect of layout parasitics is considerable even at the intra-cell level in standard cells. Hence, it has become critically important for any transistor-level optimization to consider the effect of these layout parasitics as an integral part of the optimization process. However, since it is not computationally feasible for the actual layout to be a part of any such optimization procedures, we propose a technique that estimates cell layout characteristics without actually performing the layout and subsequent extraction steps. We demonstrate in this work that it is indeed feasible to estimate the layout effects to get timing characteristics that