Effect of resistance of TSV's on performance of boost converter for low power 3D SSD with NAND flash memories

This paper investigates the effect of the TSV resistance (RTSV) on the performance of boost converters for Solid State Drive (SSD) using circuit simulation. When RTSV is 0Ω, both the rising time (trise) from 0V to 15V and the energy during boosting (Eloss) of the output voltage (VOUT) are 10.6% and 6.6% of the conventional charge pump respectively. In contrast, when RTSV is 200Ω, for example, trise is 30.1% and Eloss is 22.8% of the conventional charge pump. Besides, VOUT cannot be boosted above 20V when RTSV is larger than 210Ω. Therefore, in order to maintain the advantages of the boost converter over the charge pump in terms of trise and Eloss, the reduction of RTSV is very important. DRAM NAND controller Charge pump NAND flash Interposer

• Type: Conference
• Year: 2009
• Where: 3DIC
• Authors: Tadashi Yasufuku, Koichi Ishida, Shinji Miyamoto, Hiroto Nakai, Makoto Takamiya, Takayasu Sakurai, Ken Takeuchi
• Keywords: 3DIC 2009, Boost Converter, Charge Pump, Conventional Charge Pump, Hardware