Sciweavers

ISCAS
2002
IEEE

ESD protection circuits with novel MOS-bounded diode structures

14 years 3 months ago
ESD protection circuits with novel MOS-bounded diode structures
On-chip ESD protection circuits realized with novel diode structures without the field-oxide boundary across the p/n junction are proposed. A PMOS (NMOS) is especially inserted into the diode structure to form the PMOS-bounded (NMOS-bounded) diode, which is used to block the field oxide isolation across the p/n junction in the diode structure. Without the field oxide boundary across the p/n junction of diode structure, the proposed PMOS-bounded and NMOS-bounded diodes can sustain much higher ESD stress, especially under the reverse-biased condition. Such PMOS-bounded and NMOS-bounded diodes are fully process-compatible to general CMOS processes without additional process modification or mask layers. The ESD protection circuits designed by such new diodes with different junction perimeters have been successfully verified in a 0.35-µm CMOS process.
Ming-Dou Ker, Che-Hao Chuang
Added 15 Jul 2010
Updated 15 Jul 2010
Type Conference
Year 2002
Where ISCAS
Authors Ming-Dou Ker, Che-Hao Chuang
Comments (0)