Multilevel flash memory on-chip error correction based on trellis coded modulation

This paper presents a multilevel (ML) Flash memory onchip error correction system design based on the concept of trellis coded modulation (TCM). This is motivated by the non-trivial modulation process in ML memory storage and the effectiveness of TCM on integrating coding with modulation to provide better performance. Using code storage 2bits/cell Flash memory as a test vehicle, the effectiveness of TCM-based systems, in terms of error-correcting performance, coding redundancy, silicon cost, and operation latency, has been successfully demonstrated.

• Type: Conference
• Year: 2006
• Where: ISCAS
• Authors: Fei Sun, Siddharth Devarajan, Kenneth Rose, Tong Zhang
• Keywords: Flash Memory, ISCAS 2006, Non-trivial Modulation Process, Trellis Coded Modulation