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2015
ACM

A negative-resistance sense amplifier for low-voltage operating STT-MRAM

8 years 7 months ago
A negative-resistance sense amplifier for low-voltage operating STT-MRAM
- This paper exhibits a 65-NM 8-Mb spin transfer torque magnetoresistance random access memory (STT-MRAM) operating at 0.38V. The proposed sense amplifier comprises a boosted-gate nMOS and negative-resistance pMOSes as loads, which maximizes the readout margin. The
Yohei Umeki, Koji Yanagida, Shusuke Yoshimoto, Shi
Added 16 Apr 2016
Updated 16 Apr 2016
Type Journal
Year 2015
Where ASPDAC
Authors Yohei Umeki, Koji Yanagida, Shusuke Yoshimoto, Shintaro Izumi, Masahiko Yoshimoto, Hiroshi Kawaguchi, Koji Tsunoda, Toshihiro Sugii
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