- This paper exhibits a 65-NM 8-Mb spin transfer torque magnetoresistance random access memory (STT-MRAM) operating at 0.38V. The proposed sense amplifier comprises a boosted-gate nMOS and negative-resistance pMOSes as loads, which maximizes the readout margin. The
Yohei Umeki, Koji Yanagida, Shusuke Yoshimoto, Shi