Abstract—Modern high-speed links and I/O subsystems often employ sophisticated coding strategies to boost error resilience and achieve multiGb/s throughput. The end-to-end analys...
Aadithya V. Karthik, Sayak Ray, Jaijeet Roychowdhu...
—Power consumption is becoming more critical in modern integrated circuit (IC) designs and clock network is one of the major contributors for on-chip power. Resonant clock has be...
– This paper presents a small area, low power, fully synthesizable PLL with a current output DAC and an interpolative-phase coupled oscillator using edge injection technique for ...
Abstract—A cross-layer framework (spanning device and circuit levels) is presented for designing robust and energy-efficient SRAM cells, made of deeply-scaled FinFET devices. In...
- This paper exhibits a 65-NM 8-Mb spin transfer torque magnetoresistance random access memory (STT-MRAM) operating at 0.38V. The proposed sense amplifier comprises a boosted-gate ...
Yohei Umeki, Koji Yanagida, Shusuke Yoshimoto, Shi...
Abstract— We address the problem of formally verifying nonlinear analog circuits with an uncertain initial set by computing their reachable set. A reachable set contains the unio...
Hyun-Sek Lukas Lee, Matthias Althoff, Stefan Hoell...
Passive macromodeling for RF circuit blocks is a critical task to facilitate efficient system-level simulation for large-scale RF systems (e.g., wireless transceivers). In this pa...
Ying-Chih Wang, Shihui Yin, Minhee Jun, Xin Li 000...
As the feature size shrinks, electromigration (EM) becomes a more critical reliability issue in IC design. EM around the via structures accounts for much of the reliability proble...
Early stage power estimation is critical for SoC architecture exploration and validation in modern VLSI design, but realtime, long time interval and accurate estimation is still c...
Jianlei Yang, Liwei Ma, Kang Zhao, Yici Cai, Tin-F...
—Recently, an emerging non-volatile memory called Racetrack Memory (RM) becomes promising to satisfy the requirement of increasing on-chip memory capacity. RM can achieve ultra-h...
Chao Zhang, Guangyu Sun, Weiqi Zhang, Fan Mi, Hai ...