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ISQED
2010
IEEE

New SRAM design using body bias technique for ultra low power applications

14 years 1 months ago
New SRAM design using body bias technique for ultra low power applications
A new SRAM design is proposed. Body biasing improves the static noise margin (SNM) improved by at least 15% compared to the standard cells. Through using this technique, lowering supply voltage is possible. This SRAM cell is working under 0.3V supply voltage offering a SNM improvement of 22% for the read cycle. Write Margin is not affected due to using body biasing technique. 65nm ST models are used for simulations.
Farshad Moradi, Dag T. Wisland, Hamid Mahmoodi, Yn
Added 12 Oct 2010
Updated 12 Oct 2010
Type Conference
Year 2010
Where ISQED
Authors Farshad Moradi, Dag T. Wisland, Hamid Mahmoodi, Yngvar Berg, Tuan Vu Cao
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