New SRAM design using body bias technique for ultra low power applications

A new SRAM design is proposed. Body biasing improves the static noise margin (SNM) improved by at least 15% compared to the standard cells. Through using this technique, lowering supply voltage is possible. This SRAM cell is working under 0.3V supply voltage offering a SNM improvement of 22% for the read cycle. Write Margin is not affected due to using body biasing technique. 65nm ST models are used for simulations.

• Type: Conference
• Year: 2010
• Where: ISQED
• Authors: Farshad Moradi, Dag T. Wisland, Hamid Mahmoodi, Yngvar Berg, Tuan Vu Cao
• Keywords: Body Biasing, Hardware, ISQED 2010, Static Noise Margin, Supply Voltage