Physical Extension of the Logical Effort Model

Abstract. The logical effort method has appeared very convenient for fast estimation and optimization of single paths. However it necessitates a calibration of all the gates of the library and appears to be sub-optimal for a complex implementation. This is due to the inability of this model in capturing I/O coupling and input ramp effects. In this paper, we introduce a physically based extension of the logical effort model, considering I/O coupling capacitance and input ramp effects. This extension of the logical effort model is deduced from an analysis of the supply gate switching process. Validation of this model is performed on 0.18µm and 0.13µm STM technologies. Application is given to the definition of a compact representation of CMOS library timing performance.

• Type: Conference
• Year: 2004
• Where: PATMOS
• Authors: B. Lasbouygues, Robin Wilson, Philippe Maurine, Nadine Azémard, Daniel Auvergne
• Keywords: Input Ramp Effects, Logical Effort, Logical Effort Model, PATMOS 2004