Physics-based compact modeling, as opposed to the conventional empirical approach, is emphasized for nanoscale nonclassical CMOS. UFDG, a physics-based compact model for generic double-gate MOSFETs with ultra-thin bodies, is overviewed, and its applications to double- and (multiple) independent-gate FinFET device and circuit design are demonstrated.
Vishal P. Trivedi, Jerry G. Fossum, Leo Mathew, Mu