This site uses cookies to deliver our services and to ensure you get the best experience. By continuing to use this site, you consent to our use of cookies and acknowledge that you have read and understand our Privacy Policy, Cookie Policy, and Terms
Physics-based compact modeling, as opposed to the conventional empirical approach, is emphasized for nanoscale nonclassical CMOS. UFDG, a physics-based compact model for generic double-gate MOSFETs with ultra-thin bodies, is overviewed, and its applications to double- and (multiple) independent-gate FinFET device and circuit design are demonstrated.
Vishal P. Trivedi, Jerry G. Fossum, Leo Mathew, Mu