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MR
2007

A step by step methodology to analyze the IGBT failure mechanisms under short circuit and turn-off inductive conditions using 2D

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A step by step methodology to analyze the IGBT failure mechanisms under short circuit and turn-off inductive conditions using 2D
A systematic methodology is developed in order to clarify the punch through Trench Insulated Gate Bipolar Transistor (T-IGBT) failure mechanisms which can occur under extreme operating conditions such as short circuit and clamped inductive switching. By considering a 2D dimensional physically based device simulation, and by analyzing some T-IGBT physical parameters, it is possible to identify if the failure mechanism is due to a breakdown, a latchup or a thermal runaway phenomenon.
A. Benmansour, Stephane Azzopardi, J. C. Martin, E
Added 27 Dec 2010
Updated 27 Dec 2010
Type Journal
Year 2007
Where MR
Authors A. Benmansour, Stephane Azzopardi, J. C. Martin, E. Woirgard
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