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» A design platform for 90-nm leakage reduction techniques
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DAC
2005
ACM
14 years 8 months ago
Enhanced leakage reduction Technique by gate replacement
Input vector control (IVC) technique utilizes the stack effect in CMOS circuit to apply the minimum leakage vector (MLV) to the circuit at the sleep mode to reduce leakage. Additi...
Lin Yuan, Gang Qu
ISLPED
2009
ACM
132views Hardware» more  ISLPED 2009»
14 years 2 months ago
Enabling ultra low voltage system operation by tolerating on-chip cache failures
Extreme technology integration in the sub-micron regime comes with a rapid rise in heat dissipation and power density for modern processors. Dynamic voltage scaling is a widely us...
Amin Ansari, Shuguang Feng, Shantanu Gupta, Scott ...
TVLSI
2008
126views more  TVLSI 2008»
13 years 7 months ago
Body Bias Voltage Computations for Process and Temperature Compensation
With continued scaling into the sub-90nm regime, the role of process, voltage and temperature (PVT) variations on the performance of VLSI circuits has become extremely important. T...
Sanjay V. Kumar, Chris H. Kim, Sachin S. Sapatneka...
TIM
2010
294views Education» more  TIM 2010»
13 years 2 months ago
Standby Leakage Power Reduction Technique for Nanoscale CMOS VLSI Systems
In this paper, a novel low-power design technique is proposed to minimize the standby leakage power in nanoscale CMOS very large scale integration (VLSI) systems by generating the ...
HeungJun Jeon, Yong-Bin Kim, Minsu Choi
ISQED
2006
IEEE
107views Hardware» more  ISQED 2006»
14 years 1 months ago
Impact of Gate-Length Biasing on Threshold-Voltage Selection
Gate-length biasing is a runtime leakage reduction technique that leverages on the short-channel effect by marginally increasing the gate-length of MOS devices to significantly ...
Andrew B. Kahng, Swamy Muddu, Puneet Sharma