The threshold voltage (Vth) of a nanoscale transistor is severely affected by random dopant fluctuations and line-edge roughness. The analysis of these effects usually requires at...
Simulation is used to evaluate parking space availability for a current layout and for future design options at Miami University. By using simulation, an alternative design that i...
Decision making in industry continues to become more complicated. Customers are more demanding, competition is more fierce, and costs for labor and raw materials continue to rise....
: Spin-Torque Transfer Magnetic RAM (STT MRAM) is a promising candidate for future universal memory. It combines the desirable attributes of current memory technologies such as SRA...
Jing Li, Charles Augustine, Sayeef S. Salahuddin, ...
The use of CMOS nanometer technologies at 65 nm and below will pose serious challenges on the design of mixed-signal integrated systems in the very near future. Rising design comp...