With aggressive gate oxide scaling, latent defects in the gate oxide manifest as traps that, in time, lead to gate oxide breakdown. Progressive gate oxide breakdown, also referred...
— Negative Bias Temperature Instability (NBTI) in PMOS transistors has become a significant reliability concern in present day digital circuit design. With continued scaling, th...
Sanjay V. Kumar, Chris H. Kim, Sachin S. Sapatneka...
Negative bias temperature instability (NBTI) in MOSFETs is one of the major reliability challenges in nano-scale technology. This paper presents an efficient technique to characte...
Kunhyuk Kang, Kee-Jong Kim, Ahmad E. Islam, Muhamm...
Printing and scanning of text documents introduces degradations to the characters which can be modeled. Interestingly, certain combinations of the parameters that govern the degra...
Abstract— An analytical model is developed for cellular networks with a combined adaptive bandwidth allocation and trafficrestriction mechanism. Instead of focusing only on the ...