⎯ Technology scaling is in the era where the chip performance is constrained by its power dissipation. Although the power limits vary with the application domain, they dictate th...
In enterprise and data center networks, the scalability of the data plane becomes increasingly challenging as forwarding tables and link speeds grow. Simply building switches with...
ABSTRACT: An active leakage-injection scheme (ALIS) for lowvoltage (LV) high-density (HD) SRAMs is presented. By means of a feedback loop comprising a servo-amplifier and a commond...
Process-induced variations and sub-threshold leakage in bulk-Si technology limit the scaling of SRAM into sub-32 nm nodes. New device architectures are being considered to improve ...
Andrew Carlson, Zheng Guo, Sriram Balasubramanian,...
The detection of all open defects within 6T SRAM cells is always a challenge due to the significant test time requirements. This paper proposes a new design-for-test (DFT) techniq...