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VLSID
2007
IEEE
85views VLSI» more  VLSID 2007»
14 years 7 months ago
Metrics to Quantify Steady and Transient Gate Leakage in Nanoscale Transistors: NMOS vs. PMOS Perspective
In this paper we explore the use of a set of novel design metrics for characterizing the impact of gate oxide tunneling current in nanometer CMOS devices and perform Monte Carlo s...
Elias Kougianos, Saraju P. Mohanty
CODES
2010
IEEE
13 years 5 months ago
Statistical approach in a system level methodology to deal with process variation
The impact of process variation in state of the art technology makes traditional (worst case) designs unnecessarily pessimistic, which translates to suboptimal designs in terms of...
Concepción Sanz Pineda, Manuel Prieto, Jos&...
ISQED
2007
IEEE
150views Hardware» more  ISQED 2007»
14 years 1 months ago
A Design Methodology for Matching Improvement in Bandgap References
Errors caused by tolerance variations and mismatches among components severely degrade the performance of integrated circuits. These random effects in process parameters significa...
Juan Pablo Martinez Brito, Hamilton Klimach, Sergi...
TVLSI
2010
13 years 2 months ago
Variation-Aware System-Level Power Analysis
Abstract-- The operational characteristics of integrated circuits based on nanoscale semiconductor technology are expected to be increasingly affected by variations in the manufact...
Saumya Chandra, Kanishka Lahiri, Anand Raghunathan...
BROADNETS
2006
IEEE
14 years 1 months ago
SeeMote: In-Situ Visualization and Logging Device for Wireless Sensor Networks
In this paper we address three challenges that are present when building and analyzing wireless sensor networks (WSN) as part of ubiquitous computing environment: the need for an ...
Leo Selavo, Gang Zhou, John A. Stankovic