A construction using the E8 lattice and Reed-Solomon codes for error-correction in flash memory is given. Since E8 lattice decoding errors are bursty, a Reed-Solomon code over GF(2...
Several physical effects that limit the reliability and performance of multilevel flash memories induce errors that have low magnitudes and are dominantly asymmetric. This paper st...
Codes for rank modulation have been recently proposed as a means of protecting flash memory devices from errors. We study basic coding theoretic problems for such codes, representi...
By storing more than one bit in each memory cell, multi-level per cell (MLC) NAND flash memories are dominating global flash memory market due to their appealing storage density ad...
NAND flash memory has become an indispensable component in mobile embedded systems because of its versatile features such as non-volatility, solid-state reliability, low cost and ...
Chanik Park, Jaeyu Seo, Sunghwan Bae, Hyojun Kim, ...