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DAC
2011
ACM
12 years 7 months ago
Rethinking memory redundancy: optimal bit cell repair for maximum-information storage
SRAM design has been a major challenge for nanoscale manufacturing technology. We propose a new bit cell repair scheme for designing maximum-information memory system (MIMS). Unli...
Xin Li
CF
2011
ACM
12 years 7 months ago
Hybrid high-performance low-power and ultra-low energy reliable caches
Ubiquitous computing has become a very popular paradigm. The most suitable technological solution for those systems consists of using hybrid processors able to operate at high vol...
Bojan Maric, Jaume Abella, Francisco J. Cazorla, M...
ARVLSI
1997
IEEE
105views VLSI» more  ARVLSI 1997»
13 years 11 months ago
An Embedded DRAM for CMOS ASICs
The growing gap between on-chip gates and off-chip I/O bandwidth argues for ever larger amounts of on-chip memory. Emerging portable consumer technology, such as digital cameras, ...
John Poulton
VLSID
2006
IEEE
169views VLSI» more  VLSID 2006»
14 years 1 months ago
A Low Leakage and SNM Free SRAM Cell Design in Deep Sub Micron CMOS Technology
As the IC process technology scales, the oxide thickness and operating voltage continues to decrease. The gate oxide thickness in recent and future IC process technology has appro...
Sanjeev K. Jain, Pankaj Agarwal
GLVLSI
2011
IEEE
344views VLSI» more  GLVLSI 2011»
12 years 11 months ago
Circuit design of a dual-versioning L1 data cache for optimistic concurrency
This paper proposes a novel L1 data cache design with dualversioning SRAM cells (dvSRAM) for chip multi-processors (CMP) that implement optimistic concurrency proposals. In this n...
Azam Seyedi, Adrià Armejach, Adrián ...