In this paper we explore the use of a set of novel design metrics for characterizing the impact of gate oxide tunneling current in nanometer CMOS devices and perform Monte Carlo s...
Abstract-- We have continued development of Optically Reconfigurable Gate Arrays (ORGAs) to realize larger virtual gate count VLSIs than currently available VLSIs. The grain and st...
Abstract--An asynchronous high-speed wave-pipelined bit-serial link for on-chip communication is presented as an alternative to standard bit-parallel links. The link employs the di...
Rostislav (Reuven) Dobkin, Michael Moyal, Avinoam ...
Gate oxide tunneling current (Igate) is emerging as a key roadblock for device scaling in nanometer-scale CMOS circuits. A practical means to reduce Igate is to leverage dual Tox ...
Anup Kumar Sultania, Dennis Sylvester, Sachin S. S...
As a result of aggressive technology scaling, gate leakage (gate oxide direct tunneling) has become a major component of total power dissipation. Use of dielectrics of higher perm...
Saraju P. Mohanty, Ramakrishna Velagapudi, Elias K...