- Data in conventional six transistor (6T) static random access memory (SRAM) cells are vulnerable to noise due to the direct access to the data storage nodes through the bit lines...
- In low temperature polycrystalline silicon (LTPS) based display technologies, the electrical parameter variations in thin film transistors (TFTs) caused by random grain boundarie...
We consider active leakage power dissipation in FPGAs and present a “no cost” approach for active leakage reduction. It is well-known that the leakage power consumed by a digi...
—To overcome the energy-efficiency limitations imposed by finite sub-threshold slope in CMOS transistors, this paper explores the design of integrated circuits based on nanoelect...
Fred Chen, Hei Kam, Dejan Markovic, Tsu-Jae King L...
Parallel counters are key elements in many arithmetic circuits, especially fast multipliers. In this paper, novel architectures and designs for high speed, low power (3, 2), (7, 3...