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» Silicon Single-Electron Devices and Their Applications
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ISCAS
2006
IEEE
85views Hardware» more  ISCAS 2006»
14 years 1 months ago
Digital phase-shift modulation for an isolation buffer in silicon-on-sapphire CMOS
— We designed and fabricated a 4-channels digital isolation amplifier in a 0.5µm Silicon-on-Sapphire technology. The isolation device was fabricated on a single die, taking adv...
Eugenio Culurciello, Philippe O. Pouliquen, Andrea...
ISCAS
2007
IEEE
79views Hardware» more  ISCAS 2007»
14 years 1 months ago
Impact of strain on the design of low-power high-speed circuits
- In this article, we explore the impact of strain on circuit performance when strained silicon (s-Si) devices are used for designing low-power high-speed circuits. Emphasis has be...
H. Ramakrishnan, K. Maharatna, S. Chattopadhyay, A...
ISCAPDCS
2007
13 years 8 months ago
Architectural requirements of parallel computational biology applications with explicit instruction level parallelism
—The tremendous growth in the information culture, efficient digital searches are needed to extract and identify information from huge data. The notion that evolution in silicon ...
Naeem Zafar Azeemi
FPL
2006
Springer
113views Hardware» more  FPL 2006»
13 years 11 months ago
A Novel Heuristic and Provable Bounds for Reconfigurable Architecture Design
This paper is concerned with the application of formal optimisation methods to the design of mixed-granularity FPGAs. In particular, we investigate the appropriate mix and floorpl...
Alastair M. Smith, George A. Constantinides, Peter...
MJ
2008
148views more  MJ 2008»
13 years 7 months ago
Drive current boosting of n-type tunnel FET with strained SiGe layer at source
Though silicon tunnel field effect transistor (TFET) has attracted attention for sub-60 mV/decade subthreshold swing and very small OFF current (IOFF), its practical application i...
Nayan Patel, A. Ramesha, Santanu Mahapatra