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20
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ISQED
2005
IEEE
64
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ISQED 2005
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Design of High Performance Sense Amplifier Using Independent Gate Control in sub-50nm Double-Gate MOSFET
14 years 2 months ago
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online.sfsu.edu
Double-Gate (DG) transistor has emerged as the most promising device for nano-scale circuit design. Independent control of front and back gate in DG devices can be effectively use...
Saibal Mukhopadhyay, Hamid Mahmoodi-Meimand, Kaush...
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