Design of High Performance Sense Amplifier Using Independent Gate Control in sub-50nm Double-Gate MOSFET

Double-Gate (DG) transistor has emerged as the most promising device for nano-scale circuit design. Independent control of front and back gate in DG devices can be effectively used to improve performance and reduce power in sub-50nm circuits. In this paper, we propose a high-performance sense-amplifier design using independent gate control in symmetric and asymmetric DG devices. The proposed design reduces the sensing delay of the sense amplifier by 30-35% and dynamic power by 10% (at 6GHz) from the connected gate design.

• Type: Conference
• Year: 2005
• Where: ISQED
• Authors: Saibal Mukhopadhyay, Hamid Mahmoodi-Meimand, Kaushik Roy
• Keywords: Asymmetric Dg Devices, DG Devices, Hardware, ISQED 2005, Nano-scale Circuit Design