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    ICCAD
    2010
    IEEE
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    Stress-driven 3D-IC placement with TSV keep-out zone and regularity study
    13 years 9 months ago
    Stress-driven 3D-IC placement with TSV keep-out zone and regularity study
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    Through-silicon via (TSV) fabrication causes tensile stress around TSVs which results in significant carrier mobility variation in the devices in their neighborhood. Keep-out zone ...
    Krit Athikulwongse, Ashutosh Chakraborty, Jae-Seok...
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