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26
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ISQED
2005
IEEE
90
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ISQED 2005
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Analysis and Design of LVTSCR-based EOS/ESD Protection Circuits for Burn-in Environment
14 years 5 months ago
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www.ece.uwaterloo.ca
As technology feature size is reduced, ESD becomes one of the dominant failure modes due to the lower gate oxide breakdown voltage. Also, the holding voltage of LVTSCR devices is ...
Oleg Semenov, H. Sarbishaei, Manoj Sachdev
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