ISCAS
2006
IEEE
14 years 4 months ago
2006
IEEE
— In this paper we propose a new metric called “effective tunneling capacitance” (Ct eff ) to quantify the transient swing in the gate leakage (gate oxide tunneling) current ...
ICCD
2006
IEEE
14 years 7 months ago
2006
IEEE
Abstract— Gate leakage (direct tunneling current for sub65nm CMOS) can severely affect both the transient and steady state behaviors of CMOS circuits. In this paper we quantify t...
VLSID
2007
IEEE
14 years 11 months ago
2007
IEEE
In this paper we explore the use of a set of novel design metrics for characterizing the impact of gate oxide tunneling current in nanometer CMOS devices and perform Monte Carlo s...