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DAC
2008
ACM
15 years 17 days ago
Statistical modeling and simulation of threshold variation under dopant fluctuations and line-edge roughness
The threshold voltage (Vth) of a nanoscale transistor is severely affected by random dopant fluctuations and line-edge roughness. The analysis of these effects usually requires at...
Yun Ye, Frank Liu, Sani R. Nassif, Yu Cao