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41
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GLVLSI
2009
IEEE
112
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VLSI
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GLVLSI 2009
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The effect of design parameters on single-event upset sensitivity of MOS current mode logic
14 years 7 months ago
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In this paper, we describe and discuss the effects of design parameters such as transistor size, output voltage swing and bias current on radiation sensitivity of MOS current mode...
Mahta Haghi, Jeff Draper
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