SBCCI
2005
ACM
14 years 6 months ago
2005
ACM
Gate oxide tunneling current Igate and sub-threshold current Isub dominate the leakage of designs. The latter depends on threshold voltage Vth while Igate vary with the thickness ...
ISQED
2008
IEEE
14 years 7 months ago
2008
IEEE
The effects of random variations during the manufacturing process on devices can be simulated as a variation of transistor parameters. Device degradation, due to temperature or vo...