A novel design approach for simultaneous power and stability (static noise margin, SNM) optimization of nanoCMOS static random access memory (SRAM) is presented. A 45nm single-end...
Garima Thakral, Saraju P. Mohanty, Dhruva Ghai, Dh...
Sciweavers respects the rights of all copyright holders and in this regard, authors are only allowed to share a link to their preprint paper on their own website.
Every contribution is associated with a desciptive image. It is the sole responsibility of the authors to ensure that their posted image is not copyright infringing. This service is compliant with IEEE copyright.