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ITC
2003
IEEE

EEPROM Memory: Threshold Voltage Built In Self Diagnosis

14 years 4 months ago
EEPROM Memory: Threshold Voltage Built In Self Diagnosis
Knowing, that the threshold voltage of the EEPROM memory cells is a key parameter to determine the overall performance of the memory, a build in structure to extract this information is a very relevant choice to fast diagnose failure in the memory. Thus, the objective of this paper is to present a built in self-diagnosis of EEPROM memory cells, based on threshold voltage extraction. In order to extract the threshold voltage, the modified circuit and the associated test sequence are presented. Based on the threshold voltage extraction, complementary information is proposed to improve the classical memory diagnosis methodology.
Jean Michel Portal, Hassen Aziza, Didier Né
Added 04 Jul 2010
Updated 04 Jul 2010
Type Conference
Year 2003
Where ITC
Authors Jean Michel Portal, Hassen Aziza, Didier Née
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