CF
2011
ACM
12 years 11 months ago
2011
ACM
Ubiquitous computing has become a very popular paradigm. The most suitable technological solution for those systems consists of using hybrid processors able to operate at high vol...
JCSC
2002
13 years 11 months ago
2002
There is a growing need to analyze and optimize the stand-by component of power in digital circuits designed for portable and battery-powered applications. Since these circuits re...
TVLSI
2008
13 years 11 months ago
2008
-- Aggressive CMOS scaling results in low threshold voltage and thin oxide thickness for transistors manufactured in deep submicron regime. As a result, reducing the subthreshold a...
DT
2006
13 years 11 months ago
2006
The ITRS (International Technology Roadmap for Semiconductors) predicts aggressive scaling down of device size, transistor threshold voltage and oxide thickness to meet growing de...
DELTA
2008
IEEE
14 years 1 months ago
2008
IEEE
A threshold voltage start-up (TVS) scheme for a boost converter is presented. The TVS converter could start up at the average threshold voltage of the fabrication process, and con...
ISCAS
1995
IEEE
14 years 3 months ago
1995
IEEE
— This paper introduces a simple analytical model for estimating standby and switching power dissipation in deep submicron CMOS digital circuits. The model is based on Berkeley S...
EURODAC
1995
IEEE
14 years 3 months ago
1995
IEEE
Based on an explicit formulation of delays, an improved model for low voltage operation of CMOS inverter has been derived. Extrinsic and intrinsic effects, such as transistor curr...
ITC
2003
IEEE
14 years 4 months ago
2003
IEEE
Knowing, that the threshold voltage of the EEPROM memory cells is a key parameter to determine the overall performance of the memory, a build in structure to extract this informat...
SBCCI
2005
ACM
14 years 5 months ago
2005
ACM
Gate oxide tunneling current Igate and sub-threshold current Isub dominate the leakage of designs. The latter depends on threshold voltage Vth while Igate vary with the thickness ...
MTDT
2006
IEEE
14 years 5 months ago
2006
IEEE
This paper highlights the cell current characterization of a low leakage 6T SRAM by adjusting the threshold voltages of the transistors in the memory array to reduce the standby p...