Three-Dimensional Simulation of Semiconductor Devices

The exact knowledge of the heat flow in heterojunction bipolar transistors (HBT) during power operation is an important key factor for the systematic improvement of power density, gain, power added efficiency and reliability. For an analysis of the influence of different thermal boundary conditions in HBT structures on the device performance, numerical simulations of HBT structures have been carried out. For HBT modeling we used our 2D/3D program SIMBA [1,2], which is based on a self-consistent solution of a drift-diffusion model coupled with the heat flow equation to include non-uniform lattice temperatures. Thermal boundary conditions can be ideal thermal contacts, ideal thermal isolation and radiation thermal boundary conditions, which are determined by a surface thermal conductivity and a reference temperature. Fig. 1 shows the basic GaInP/GaAs-HBT structure and the layer parameters used for the simulations. At the bottom of the structure an additional 20

• Type: Conference
• Year: 1994
• Where: HPCN
• Authors: Wilfried Klix, Ralf Dittmann, Roland Stenzel
• Keywords: Distributed And Parallel Computing, HPCN 1994, Surface Thermal Conductivity, Thermal Boundary Conditions, Thermal Conductivity