Sciweavers

MR
2007

Trench IGBT failure mechanisms evolution with temperature and gate resistance under various short-circuit conditions

13 years 10 months ago
Trench IGBT failure mechanisms evolution with temperature and gate resistance under various short-circuit conditions
Two extreme configurations under short circuit conditions leading to the punch through Trench IGBT failure under the effect of the temperature and the gate resistance have been studied. By analyzing internal physical parameters, it was highlighted that the elevation of the temperature causes an acceleration of the failure which is due to a thermal runaway phenomenon, whereas the influence of the gate resistance on the failure evolution is minimal.
A. Benmansour, Stephane Azzopardi, J. C. Martin, E
Added 27 Dec 2010
Updated 27 Dec 2010
Type Journal
Year 2007
Where MR
Authors A. Benmansour, Stephane Azzopardi, J. C. Martin, E. Woirgard
Comments (0)