CMOS logic design with independent-gate FinFETs

Fin-type field-effect transistors (FinFETs) are promising substitutes for bulk CMOS in nano-scale circuits. In this paper, it is observed that in spite of improved device characteristics, high active leakage may remain a problem for FinFET logic circuits. Leakage is

• Type: Conference
• Year: 2007
• Where: ICCD
• Authors: Anish Muttreja, Niket Agarwal, Niraj K. Jha
• Keywords: FinFET Logic Circuits, Hardware, ICCD 2007, Improved Device Characteristics, Nano-scale Circuits