Graphene nanoribbon FETs: technology exploration and CAD

Graphene nanoribbon FETs (GNRFETs) have emerged as a promising candidate for nanoelectronics applications. This paper summarizes (i) current understanding and prospects for GNRFETs as ultimately scaled, ideal ballistic transistors, (ii) physics-based modeling of GNRFETs to support circuit design and CAD, and (iii) variability and defects in GNRs and their impact on GNRFET circuit performance and reliability.

• Type: Conference
• Year: 2008
• Where: ICCAD
• Authors: Kartik Mohanram, Jing Guo
• Keywords: GNRFET Circuit Performance, Hardware, ICCAD 2008, Ideal Ballistic Transistors, Physics-based Modeling