The power supply transient signal (IDDT) method that we propose for defect detection analyze regional signal variations introduced by defects at a set of power supply pads on the chip under test (CUT). The method is based on the comparison of the CUT with a few chips that have been shown to be defect free. Simulation data obtained from an extracted R-model of the CUTs power grid is used to calibrate for probe card contact parasitic. Multiple defect free chips are analyzed to establish a statistical metric that distinguishes between defective behavior and process variation. This paper presents hardware results that demonstrate the effectiveness of a geometry based defect detection technique using nine copies of a test chip, eight of which were used as defect free chips and the ninth one treated as a chip with emulated defects. The method is evaluated under a variety of test scenarios to determine the sensitivity of the technique.