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GLVLSI
2008
IEEE
14 years 4 months ago
2008
IEEE
Novel nano-scale devices have shown promising potential to overcome physical barriers faced by complementary metaloxide semiconductor (CMOS) technology in future circuit design. H...
DAC
2004
ACM
14 years 11 months ago
2004
ACM
As process technology migrates to deep submicron with feature size less than 100nm, global wire delay is becoming a major hindrance in keeping the latency of intra-chip communicat...
DAC
2005
ACM
14 years 11 months ago
2005
ACM
We present a new methodology which takes into consideration the effect of Within-Die (WID) process variations on a low-voltage parallel system. We show that in the presence of pro...
ICCAD
2005
IEEE
14 years 6 months ago
2005
IEEE
— The generation of arbitrary patterns and shapes at very small scales is at the heart of our effort to miniaturize circuits and is fundamental to the development of nanotechnolo...
DATE
2006
IEEE
14 years 4 months ago
2006
IEEE
It is anticipated that self assembled ultra-dense nanomemories will be more susceptible to manufacturing defects and transient faults than conventional CMOS-based memories, thus t...