172 search results - page 13 / 35 » FinFET-based SRAM design |
ISLPED
2009
ACM
14 years 2 months ago
2009
ACM
The theoretical lower limit of subthreshold swing in MOSFETs (60 mV/decade) significantly restricts low voltage operation since it results in a low ON to OFF current ratio at low ...
ICIP
2004
IEEE
14 years 9 months ago
2004
IEEE
H.264/AVC is a new international standard for the compression of natural video images, in which a deblocking filter has been adopted to remove blocking artifacts. In this paper, w...
VLSID
2009
IEEE
14 years 8 months ago
2009
IEEE
Abstract-- Single-ended static random access memory (SESRAM) is well known for their tremendous potential of low active power and leakage dissipations. In this paper, we present a ...
ICCD
2008
IEEE
14 years 1 months ago
2008
IEEE
— SRAMs typically represent half of the area and more than half of the transistors on a chip today. Variability increases as feature size decreases, and the impact of variability...
VLSID
2004
IEEE
14 years 7 months ago
2004
IEEE
The detection of all open defects within 6T SRAM cells is always a challenge due to the significant test time requirements. This paper proposes a new design-for-test (DFT) techniq...