268 search results - page 8 / 54 » Gating currents |
ISLPED
2003
ACM
14 years 22 days ago
2003
ACM
We introduce and analyze the ground bounce due to power mode transition in power gating structures. To reduce the ground bounce, we propose novel power gating structures in which ...
SBCCI
2005
ACM
14 years 1 months ago
2005
ACM
Gate oxide tunneling current Igate and sub-threshold current Isub dominate the leakage of designs. The latter depends on threshold voltage Vth while Igate vary with the thickness ...
ARVLSI
2001
IEEE
13 years 11 months ago
2001
IEEE
We extend a class of analog CMOS circuits that can be used to perform many analog computational tasks. The circuits utilize MOSFET's in their subthreshold region as well as c...
VLSID
2006
IEEE
14 years 7 months ago
2006
IEEE
For a nanoCMOS of sub-65nm technology, where the gate oxide (SiO2) thickness is very low, the gate leakage is one of the major components of power dissipation. In this paper, we pr...
ASPDAC
2008
ACM
13 years 9 months ago
2008
ACM
The timing models used in current Static Timing Analysis tools use gate delays only for single input switching events. It is well known that the temporal proximity of signals arriv...