- Data in conventional six transistor (6T) static random access memory (SRAM) cells are vulnerable to noise due to the direct access to the data storage nodes through the bit lines...
When a signal traverses on-chip voltage domains, a level shifter is required. Inverters can handle a high to low voltage shift with minimal leakage. For a low to high voltage leve...
This paper considers the testability implications of low power design methodologies. Low power and high testability are shown to be highly contrasting requirements, and an optimiz...
Silvia Chiusano, Fulvio Corno, Paolo Prinetto, Mau...
Abstract-- Single-ended static random access memory (SESRAM) is well known for their tremendous potential of low active power and leakage dissipations. In this paper, we present a ...
Jawar Singh, Jimson Mathew, Saraju P. Mohanty, Dhi...
When multiple processor (CPU) cores and a GPU integrated together on the same chip share the off-chip main memory, requests from the GPU can heavily interfere with requests from t...
Rachata Ausavarungnirun, Kevin Kai-Wei Chang, Lava...