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ISCAS
2007
IEEE
132views Hardware» more  ISCAS 2007»
14 years 1 months ago
High Read Stability and Low Leakage Cache Memory Cell
- Data in conventional six transistor (6T) static random access memory (SRAM) cells are vulnerable to noise due to the direct access to the data storage nodes through the bit lines...
Zhiyu Liu, Volkan Kursun
DATE
2008
IEEE
114views Hardware» more  DATE 2008»
14 years 2 months ago
A Single-supply True Voltage Level Shifter
When a signal traverses on-chip voltage domains, a level shifter is required. Inverters can handle a high to low voltage shift with minimal leakage. For a low to high voltage leve...
Rajesh Garg, Gagandeep Mallarapu, Sunil P. Khatri
ATS
1997
IEEE
89views Hardware» more  ATS 1997»
13 years 11 months ago
Guaranteeing Testability in Re-encoding for Low Power
This paper considers the testability implications of low power design methodologies. Low power and high testability are shown to be highly contrasting requirements, and an optimiz...
Silvia Chiusano, Fulvio Corno, Paolo Prinetto, Mau...
VLSID
2009
IEEE
119views VLSI» more  VLSID 2009»
14 years 8 months ago
Single Ended Static Random Access Memory for Low-Vdd, High-Speed Embedded Systems
Abstract-- Single-ended static random access memory (SESRAM) is well known for their tremendous potential of low active power and leakage dissipations. In this paper, we present a ...
Jawar Singh, Jimson Mathew, Saraju P. Mohanty, Dhi...
ISCA
2012
IEEE
279views Hardware» more  ISCA 2012»
11 years 10 months ago
Staged memory scheduling: Achieving high performance and scalability in heterogeneous systems
When multiple processor (CPU) cores and a GPU integrated together on the same chip share the off-chip main memory, requests from the GPU can heavily interfere with requests from t...
Rachata Ausavarungnirun, Kevin Kai-Wei Chang, Lava...