For a nanoCMOS of sub-65nm technology, where the gate oxide (SiO2) thickness is very low, the gate leakage is one of the major components of power dissipation. In this paper, we pr...
As VLSI technology scales toward 65nm and beyond, both timing and power performance of integrated circuits are increasingly affected by process variations. In practice, people oft...
Intrusion attempts due to self-propagating code are becoming an increasingly urgent problem, in part due to the homogeneous makeup of the internet. Recent advances in anomalybased...
Denver Dash, Branislav Kveton, John Mark Agosta, E...