97 search results - page 7 / 20 » SRAM Cell Current in Low Leakage Design |
ITC
1997
IEEE
13 years 12 months ago
1997
IEEE
The detection of cell stability and data retention faults in SRAMs has been a time consuming process. In this paper we discuss a new design for test technique called Weak Write Tes...
TVLSI
2010
13 years 2 months ago
2010
Process-induced variations and sub-threshold leakage in bulk-Si technology limit the scaling of SRAM into sub-32 nm nodes. New device architectures are being considered to improve ...
HPCA
2011
IEEE
12 years 11 months ago
2011
IEEE
Extreme technology integration in the sub-micron regime comes with a rapid rise in heat dissipation and power density for modern processors. Dynamic voltage scaling is a widely us...
ASPDAC
2004
ACM
14 years 1 months ago
2004
ACM
— Reducing the ever-growing leakage power is critical to power efficient designs. Leakage reduction techniques such as power-gating using sleep transistor insertion introduces la...
ISCA
2002
IEEE
14 years 19 days ago
2002
IEEE
Leakage power is dominated by critical paths, and hence dynamic deactivation of fast transistors can yield large savings. We introduce metrics for comparing fine-grain dynamic de...