As technology scales to 40nm and beyond, intra-die process variability will cause large delay and leakage variations across a chip in addition to expected die-to-die variations. I...
Maryam Ashouei, Muhammad Mudassar Nisar, Abhijit C...
Abstract—Modeling parasitic parameters of Through-SiliconVia (TSV) structures is essential in exploring electrical characteristics such as delay and signal integrity (SI) of circ...
Roshan Weerasekera, Matt Grange, Dinesh Pamunuwa, ...
Dual-rail encoding, return-to-spacer protocol and hazard-free logic can be used to resist differential power analysis attacks by making the power consumption independent of process...
Danil Sokolov, Julian Murphy, Alexandre V. Bystrov...
Power gating has been widely used to reduce subthreshold leakage. However, its efficiency degrades very fast with technology scaling due to the gate leakage of circuits specific t...
Youngsoo Shin, Sewan Heo, Hyung-Ock Kim, Jung Yun ...
As VLSI fabrication technology progresses to 65nm feature sizes and smaller, transistors no longer operate as ideal switches. This motivates verifying digital circuits using contin...