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VLSID
2007
IEEE
131views VLSI» more  VLSID 2007»
14 years 8 months ago
Probabilistic Self-Adaptation of Nanoscale CMOS Circuits: Yield Maximization under Increased Intra-Die Variations
As technology scales to 40nm and beyond, intra-die process variability will cause large delay and leakage variations across a chip in addition to expected die-to-die variations. I...
Maryam Ashouei, Muhammad Mudassar Nisar, Abhijit C...
3DIC
2009
IEEE
279views Hardware» more  3DIC 2009»
14 years 2 months ago
Compact modelling of Through-Silicon Vias (TSVs) in three-dimensional (3-D) integrated circuits
Abstract—Modeling parasitic parameters of Through-SiliconVia (TSV) structures is essential in exploring electrical characteristics such as delay and signal integrity (SI) of circ...
Roshan Weerasekera, Matt Grange, Dinesh Pamunuwa, ...
CHES
2004
Springer
121views Cryptology» more  CHES 2004»
14 years 1 months ago
Improving the Security of Dual-Rail Circuits
Dual-rail encoding, return-to-spacer protocol and hazard-free logic can be used to resist differential power analysis attacks by making the power consumption independent of process...
Danil Sokolov, Julian Murphy, Alexandre V. Bystrov...
ASPDAC
2007
ACM
95views Hardware» more  ASPDAC 2007»
13 years 11 months ago
Simultaneous Control of Subthreshold and Gate Leakage Current in Nanometer-Scale CMOS Circuits
Power gating has been widely used to reduce subthreshold leakage. However, its efficiency degrades very fast with technology scaling due to the gate leakage of circuits specific t...
Youngsoo Shin, Sewan Heo, Hyung-Ock Kim, Jung Yun ...
FMCAD
2007
Springer
13 years 11 months ago
Circuit Level Verification of a High-Speed Toggle
As VLSI fabrication technology progresses to 65nm feature sizes and smaller, transistors no longer operate as ideal switches. This motivates verifying digital circuits using contin...
Chao Yan, Mark R. Greenstreet