TCAD
2010
13 years 6 months ago
2010
Abstract--In double patterning lithography (DPL) layout decomposition for 45nm and below process nodes, two features must be assigned opposite colors (corresponding to different ex...
ICCAD
2010
IEEE
13 years 9 months ago
2010
IEEE
In Double Patterning Lithography (DPL), conflict and stitch minimization are two main challenges. Post-routing mask decomposition algorithms [1
SLIP
2009
ACM
14 years 6 months ago
2009
ACM
Double patterning lithography seems to be a prominent choice for 32nm and 22nm technologies. Double patterning lithography techniques require additional masks for a single interco...
DAC
2009
ACM
15 years 17 days ago
2009
ACM
In double patterning lithography (DPL), coloring conflict and stitch minimization are the two main challenges. Post layout decomposition algorithm [1] [2]may not be enough to achi...