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As a result of aggressive technology scaling, gate leakage (gate oxide direct tunneling) has become a major component of total power dissipation. Use of dielectrics of higher perm...
Saraju P. Mohanty, Ramakrishna Velagapudi, Elias K...
For CMOS technologies below 65nm, gate oxide direct tunneling current is a major component of the total power dissipation. This paper presents a simulated annealing based algorith...
Saraju P. Mohanty, Ramakrishna Velagapudi, Elias K...
A negative effect of ever-shrinking supply and threshold voltages is the larger percentage of total power consumption that comes from leakage current. Several techniques have been...