ISQED
2006
IEEE
14 years 5 months ago
2006
IEEE
As a result of aggressive technology scaling, gate leakage (gate oxide direct tunneling) has become a major component of total power dissipation. Use of dielectrics of higher perm...
DATE
2006
IEEE
14 years 5 months ago
2006
IEEE
For CMOS technologies below 65nm, gate oxide direct tunneling current is a major component of the total power dissipation. This paper presents a simulated annealing based algorith...
ICCD
2004
IEEE
14 years 8 months ago
2004
IEEE
A negative effect of ever-shrinking supply and threshold voltages is the larger percentage of total power consumption that comes from leakage current. Several techniques have been...